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The massive trend toward embedded systems introduces new security threats to prevent. Malicious firmware makes it easier to launch cyberattacks against embedded systems. Systems infected with malicious firmware maintain the appearance of normal firmware operations but execute undesirable activities, which is usually a security risk. Traditionally, cybercriminals use malicious firmware to develop possible back-doors for future attacks. Due to the restricted resources of embedded systems, it is difficult to thwart these attacks using the majority of contemporary standard security protocols. In addition, monitoring the firmware operations using existing side channels from outside the processing unit, such as electromagnetic radiation, necessitates a complicated hardware configuration and in-depth technical understanding. In this paper, we propose a physical side channel that is formed by detecting the overall impedance changes induced by the firmware actions of a central processing unit. To demonstrate how this side channel can be exploited for detecting firmware activities, we experimentally validate it using impedance measurements to distinguish between distinct firmware operations with an accuracy of greater than 90%. These findings are the product of classifiers that are trained via machine learning. The implementation of our proposed methodology also leaves room for the use of hardware authentication. 

Electronic counterfeiting is a longstanding problem with adverse long-term effects for many sectors, remaining on the rise. This article presents a novel low-cost technique to embed watermarking in devices with resistive-RAM (ReRAM) by manipulating its analog physical characteristics through switching (set/reset) operation to prevent counterfeiting. We develop a system-level framework to control memory cells' physical properties for imprinting irreversible watermarks into commercial ReRAMs that will be retrieved by sensing the changes in cells' physical properties. Experimental results show that our proposed ReRAM watermarking is robust against temperature variation and acceptably fast with ~0.6bit/min of imprinting and ~15.625bits/s of retrieval rates. 

Approximate computing (AC) leverages the inherent error resilience and is used in many big-data applications from various domains such as multimedia, computer vision, signal processing, and machine learning to improve systems performance and power consumption. Like many other approximate circuits and algorithms, the memory subsystem can also be used to enhance performance and save power significantly. This paper proposes an efficient and effective systematic methodology to construct an approximate non-volatile magneto-resistive RAM (MRAM) framework using consumer-off-the-shelf (COTS) MRAM chips. In the proposed scheme, an extensive experimental characterization of memory errors is performed by manipulating the write latency of MRAM chips which exploits the inherent (intrinsic/extrinsic process variation) stochastic switching behavior of magnetic tunnel junctions (MTJs). The experimental results, involving error-resilient image compression and machine learning applications, reveal that the proposed AC framework provides a significant performance improvement and demonstrates a reduction in MRAM write energy of ~47.5% on average with negligible or no loss in output quality. 

The cells in dynamic random access memory (DRAM) degrade over time as a result of aging, leading to poor performance and potential security vulnerabilities. With a globalized horizontal supply chain, aged counterfeit DRAMs could end up on the market, posing a significant threat if employed in critical infrastructure. In this work, we look at the retention behavior of commercial DRAM chips from real-time silicon measurements and investigate how the reliability of DRAM cells degrade with accelerated aging. We analyze the retention-based errors at three different aging points to observe the design-induced variations, analyze the pattern dependency, and explore the impacts of accelerated aging for multiple DRAM vendors. We also investigate the DRAM chips’ statistical distribution to attribute the vital wear-out effects present in DRAM. We see a continuous increase in retention error as DRAM chips age and therefore infer that the aged retention signatures can be used to differentiate recycled DRAM chips in the supply chain. We also discuss the roles of device signature in DRAM aging and aging-related security implication on DRAM row-hammer error. 

Due to globalization in the semiconductor supply chain, counterfeit dynamic random-access memory (DRAM) chips/modules have been spreading worldwide at an alarming rate. Deploying counterfeit DRAM modules into an electronic system can severely affect security and reliability domains because of their sub-standard quality, poor performance, and shorter life span. Besides, studies suggest that a counterfeit DRAM can be more vulnerable to sophisticated attacks. However, detecting counterfeit DRAMs is very challenging because of their nature and ability to pass the initial testing. In this paper, we propose a technique to identify the DRAM origin (i.e., the origin of the manufacturer and the specification of individual DRAM) to detect and prevent counterfeit DRAM modules. A silicon evaluation shows that the proposed method reliably identifies off-the-shelf DRAM modules from three major manufacturers. 

True random number generator (TRNG) plays a vital role in a variety of security applications and protocols. The security and privacy of an asset rely on encryption, which solely depends on the quality of random numbers. Memory chips are widely used for generating random numbers because of their prevalence in modern electronic systems. Unfortunately, existing Dynamic Random-access Memory (DRAM)-based TRNGs produce random numbers with either limited entropy or poor throughput. In this paper, we propose a DRAM-latency based TRNG that generates high-quality random numbers. The silicon results from Samsung and Micron DDR3 DRAM modules show that our proposed DRAM-latency based TRNG is robust (against different operating conditions and environmental variations) and acceptably fast.